Emergence of Topological Edge States in Oxidized alpha-In2Se3 Nanosheets: Implications for Field-Effect Transistors

Emergence of topologicalEmergence of Topological Edge States in Oxidized alpha-In2Se3 Nanosheets: Implications for Field-Effect Transistors

Procopio, EF;  Batista, Nathanael N ; de Souza, Fábio A. L et ál..

ACS APPLIED NANO MATERIALS 4, 8154