Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching 9 January, 2017 Publications Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching S. Pinilla, G. Molla, J.L. Pau, et al. Physica Status Solidi A-Applications and Materials 213, 2884, (2016). Please Share This Tweet Like Plus one Pin It Related Posts Comparison of different methodologies for obtaining nickel nanoferrites 336 Conventional superconductivity in SrPd2Ge2 Conventional superconductivity in SrPd2Ge2 Author(s): Kim T. K.; Yaresko A. N.; Zabolotnyy V. B.; et… Quantum interference in a Cooper pair splitter: The three sites model (Reprint) Quantum interference in a Cooper pair splitter: The three sites model (Reprint). F. Dominguez, A.… Subtissue Thermal Sensing Based on Neodymium-Doped LaF3 Nanoparticles Subtissue Thermal Sensing Based on Neodymium-Doped LaF3 Nanoparticles.U. Rocha; C.J.da Silva; W. Ferreira Silva; et… Magnetic and superconducting phase diagrams in ErNi2B2C Magnetic and superconducting phase diagrams in ErNi2B2CGalvis J.A.; Crespo M.; Guillamon I; et al.Solid State… Three axis vector magnet set-up for cryogenic scanning probe microscopy Three axis vector magnet set-up for cryogenic scanning probe microscopy J.A. Galvis, E. Herrera, I.…
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