Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching 9 January, 2017 Publications Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching S. Pinilla, G. Molla, J.L. Pau, et al. Physica Status Solidi A-Applications and Materials 213, 2884, (2016). Please Share This Tweet Like Plus one Pin It Related Posts Characterizing the CdSe nanodots in the vicinity of the monolayer covering range Characterizing the CdSe nanodots in the vicinity of the monolayer covering range Capitan, Maria J.;… Optical Studies of Thin Films of Cryocondensed Mixtures of Water and Admixture of Nitrogen and Argon Optical Studies of Thin Films of Cryocondensed Mixtures of Water and Admixture of Nitrogen and… Thermal decomposition and fractal properties of sputter-deposited platinum oxide thin films Thermal decomposition and fractal properties of sputter-deposited platinum oxide thin films.Mosquera, A.; Horwat, D.; Vazquez,… Charge transfer from Eu2+to trivalent lanthanide co-dopants: Systematic behavior across the series Charge transfer from Eu2+to trivalent lanthanide co-dopants: Systematic behavior across the series Joos J.J.; Neefjes… Unveiling the Mechanisms Leading to H-2 Production Promoted by Water Decomposition on Epitaxial Graphene at Room Temperature Unveiling the Mechanisms Leading to H-2 Production Promoted by Water Decomposition on Epitaxial Graphene at… Phase behavior of hard circular arcs Phase behavior of hard circular arcs Ramírez González J.P. and Cinacchi G. Physical…
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