Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching 9 January, 2017 Publications Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching S. Pinilla, G. Molla, J.L. Pau, et al. Physica Status Solidi A-Applications and Materials 213, 2884, (2016). Please Share This Tweet Like Plus one Pin It Related Posts Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material. A.… Buildup of vibron-mediated electron correlations in molecular junctions Buildup of vibron-mediated electron correlations in molecular junctions R. Avriller, I. R. Seoane Souto, A.… Dynamic single gold nanoparticle visualization by clinical intracoronary optical coherence tomography Dynamic single gold nanoparticle visualization by clinical intracoronary optical coherence tomography Jie Hu, F. Rivero,… Optical conductivity, Drude weight and plasmons in twisted graphene bilayers 294 Polystyrene Nanopillars with Inbuilt Carbon Nanotubes Enable Synaptic Modulation and Stimulation in Interfaced Neuronal Networks Polystyrene Nanopillars with Inbuilt Carbon Nanotubes Enable Synaptic Modulation and Stimulation in Interfaced Neuronal Networks… Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum…
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