Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching 9 January, 2017 Publications Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching S. Pinilla, G. Molla, J.L. Pau, et al. Physica Status Solidi A-Applications and Materials 213, 2884, (2016). Please Share This Tweet Like Plus one Pin It Related Posts Step energies and equilibrium shape of strained monolayer islands 407 Interplay between Classical Magnetic Moments and Suprconductivity in Quantum One-Dimensional Conduct Interplay between Classical Magnetic Moments and Suprconductivity in Quantum One-Dimensional Conductors: Toward a Self-Sustained Topological… Type II superconductivity in SrPd2Ge2 Type II superconductivity in SrPd2Ge2.Samuely, T.; Szabo, P.; Prubulova, Z.; et al.Superconductor Science & Technology… Magnetic anisotropy of functionalized multi-walled carbon nanotube suspensions Magnetic anisotropy of functionalized multi-walled carbon nanotube suspensions. D. Calle, V. Negri, C. Munuera, et… Tunneling spectroscopy of the superconducting state of URu 2Si2 Tunneling spectroscopy of the superconducting state of URu 2Si2Maldonado A.; Guillamon I.; Rodrigo J.G.; et… Effect of polydispersity, bimodality, and aspect ratio on the behavoir of colloidal ….. Effect of polydispersity, bimodality, and aspect ratio on the behavoir of colloidal platelet suspensionsAuthor(s): Martinez-Raton,…
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