Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching 9 January, 2017 Publications Impact of the oxide layer on the electrical properties of silicon nanowires fabricated by metal-assisted chemical etching S. Pinilla, G. Molla, J.L. Pau, et al. Physica Status Solidi A-Applications and Materials 213, 2884, (2016). Please Share This Tweet Like Plus one Pin It Related Posts Theory of drift-enabled control in nonlocal magnon transport Theory of drift-enabled control in nonlocal magnon transport de-la-Pena, S.; Schlitz, R.; Velez, S. et… Focus point on small and medium particle accelerator facilities in Europe Focus point on small and medium particle accelerator facilities in Europe Ramos, MA… Millikelvin scanning tunneling microscope at 20/22T with a graphite enabled stick-slip approach and an energy resolution below 8 mueV: Application to conductance quantization at 20T in single atom pointcontacts of Al and Au and to the charge density wave of 2H-NbSe2 Millikelvin scanning tunneling microscope at 20/22T with a graphite enabled stick-slip approach and an energy… Do two-level systems and boson peak persist or vanish in hyperaged geological glasses of amber? Do two-level systems and boson peak persist or vanish in hyperaged geological glasses of amber?… Real-Time Operation of Photovoltaic Optoelectronic Tweezers: New Strategies for Massive Nano-object Manipulation and Reconfigurable Patterning Real-Time Operation of Photovoltaic Optoelectronic Tweezers: New Strategies for Massive Nano-object Manipulation and Reconfigurable Patterning… Capillary wave spectrum at adsorbed liquid films Capillary wave spectrum at adsorbed liquid films.Fernandez, E.M.; Chacon, E.; Tarazona, P.Physical Review B Volume:…
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