Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive ResponsesOct 16, 2021 | News, News about Publications Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive ResponsesJhen-Yong Hong; Chun-Yen Che; Dah-Chin Ling et álElectronics 10, 2525 (Oct 2021)