Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

Low-Frequency 1-f

 

 

Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

Jhen-Yong Hong; Chun-Yen Che; Dah-Chin Ling et ál

Electronics 10, 2525 (Oct 2021)