Multi-scale modeling of 2D GaSe FETs with strained channels
- 5 March, 2022
- Publications
Multi-scale modeling of 2D GaSe FETs with strained channels
Toral-Lopez, A.; Santos, H.; Marin, EG. et ál..
Nanotechnology 33, 105201 (Mar 2022)
Please Share This
Related Posts
Linear response of twisted bilayer graphene: Continuum versus tight-binding models
Linear response of twisted bilayer graphene: Continuum versus tight-binding models. T. Stauber, T. Low, G.…
Nanowriting with Clusters on Graphene on Ru(0001)
Nanowriting with Clusters on Graphene on Ru(0001). J. Diez Albar, M. Jimenez Sanchez, J. M.…
Material properties particularly suited to be measured with helium scattering: selected examples from 2D materials, van der Waals heterostructures, glassy materials, catalytic substrates, topological insulators and superconducting radio frequency materials
Material properties particularly suited to be measured with helium scattering: selected examples from 2D materials,…

NEW LIGHT AND MATTER ROUTER
A router is an essential device for transmitting information using electromagnetic radiation: it couples…
Phonon Structure, Infra-Red and Raman Spectra of Li2MnO3 by First-Principles Calculations
Phonon Structure, Infra-Red and Raman Spectra of Li2MnO3 by First-Principles Calculations Pulido, R., Naveas, N.,…