Strain-induced band gap engineering in layered TiS3
- 20 February, 2018
- Publications
Strain-induced band gap engineering in layered TiS3.
R. Biele, E. Flores, J.R Ares, et al.
Nano Research 11, 225, (2018).
Please Share This
Related Posts
Spinel to disorder rock-salt structural transition on (111) nickel ferrite thin films tailored by Ni content
Spinel to disorder rock-salt structural transition on (111) nickel ferrite thin films tailored by Ni…
Measuring Majorana nonlocality and spin structure with a quantum dot.
Measuring Majorana nonlocality and spin structure with a quantum dot. E. Prada, R. Aguado, P.…
Hydrogen Production and Degradation of Ciprofloxacin by Ag@TiO2-MoS2 Photocatalysts
Hydrogen Production and Degradation of Ciprofloxacin by Ag@TiO2-MoS2 Photocatalysts Machín, A.; Fontánez, K.; García, D. et…
Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3
Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3. A. Molina-Mendoza, M. Barawi, R.…
Nanostructured gold electrodes promote neural maturation and network connectivity
Nanostructured gold electrodes promote neural maturation and network connectivity Dominguez-Bajo, Ana;Rosa, Juliana M;Gonzalez-Mayorga, Ankor et…