Strain-induced band gap engineering in layered TiS3
- 20 February, 2018
- Publications
Strain-induced band gap engineering in layered TiS3.
R. Biele, E. Flores, J.R Ares, et al.
Nano Research 11, 225, (2018).
Please Share This
Related Posts
Control of the electromagnetic drag using fluctuating light fields
Control of the electromagnetic drag using fluctuating light fields. V.J. López Pastor, M.I. Marques Physical…
Low-Loss Electric and Magnetic Field-Enhanced Spectroscopy with Subwavelength Silicon Dimers
Low-Loss Electric and Magnetic Field-Enhanced Spectroscopy with Subwavelength Silicon Dimers.P. Albella; M. Ammeen Poyli; M.K.…
Structural and Electronic Properties of 3,4,9,10-Perylene Tetracarboxylic Dianhydride on h-BN/Rh(110)
Structural and Electronic Properties of 3,4,9,10-Perylene Tetracarboxylic Dianhydride on h-BN/Rh(110). A. J. Martinez Galera, J.M.…
Fluorescent nanothermometers provide controlled plasmonic-mediated intracellular hyperthermia
Fluorescent nanothermometers provide controlled plasmonic-mediated intracellular hyperthermiaL. Maríinez Maestro; P. Haro-Gonzalez; M. C. Iglesias de…